Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes
Electronic Archive of Sumy State University
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Fabrication and Characterization of Al/p-CuInAlSe2 Thin Film Schottky Diodes
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| Creator |
Parihar, Usha
Padha, N. Panchal, C.J. |
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| Subject |
Polycrystalline
schottky diodes Flash evaporation Current-voltage (I-V) Capacitance-voltage (C-V) characteristics Image force Dipole lowering effects Interface states M-S junction template |
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| Description |
Al/p-CuInAlSe2 polycrystalline schottky diodes fabricated by flash evaporation method were undertaken for their electrical analysis at room temperature. Diode parameters of the undertaken diodes were then derived from the current-voltage (I-V) as well as capacitance-voltage (C-V) characteristics. It has been observed that the schottky barrier height deduced from the room temperature I-V is lower to that obtained from the C-V characteristics and is attributed to the fact that I-V analysis includes both the image force and dipole lowering effects and is also reduced by the tunneling and leakage currents. The slope variation of the frequency dependent C – 2-V characteristics for the Al/p-CuInAlSe2 Schottky diode at varying frequency values from 50 kHz to 1 MHz suggests a large density of slow traps or interface states at the M-S junction. As emerging from the parameters values energy band diagram of Al and P-CuInAlSe2 has been reconstructed.
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| Publisher |
Сумський державний університет
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| Date |
2013-06-19T13:13:52Z
2013-06-19T13:13:52Z 2013 |
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| Type |
Article
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| Identifier |
Usha Parihar, N. Padha, C.J. Panchal, J. Nano- Electron. Phys. 5 No 2, 02015 (2013)
http://essuir.sumdu.edu.ua/handle/123456789/31009 |
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| Language |
en
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