On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step
Zhytomyr State University Library
Переглянути архів Інформація| Поле | Співвідношення | |
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http://eprints.zu.edu.ua/14144/
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| Title |
On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step |
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| Creator |
Sachenкo, А. V.
Belyaev, А. Е. Boltovets, N. S. Vіnogradov, А. О. Pіlіpenкo, V. А. Sheremet, V. N. |
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| Subject |
QC Physics
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| Description |
We present both theoretical and experimental temperature dependences of contact resistivity ρс(Т) for ohmic contacts to the silicon n+-n-structures whose n+-layer was formed using phosphorus diffusion or ion implantation.
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| Date |
2014
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| Type |
Article
PeerReviewed |
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| Format |
text
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| Language |
uk
english |
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| Identifier |
http://eprints.zu.edu.ua/14144/1/v17n1-2014-p001-006.pdf
Sachenкo, А. V. and Belyaev, А. Е. and Boltovets, N. S. and Vіnogradov, А. О. and Pіlіpenкo, V. А. and Sheremet, V. N. (2014) On a feature of temperature dependence of contact resistivity for ohmic contacts to n-Si with an n+-n doping step. Semiconductor Physics, Quantum Electronics & Optoelectronics, 2014. V. 17, N 1. P. 1-6., 17 (1). pp. 1-6. |
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