Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
Vernadsky National Library of Ukraine
Переглянути архів Інформація| Поле | Співвідношення | |
| Title |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers
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| Creator |
Druzhinin, A.A.
Ostrovskii, I.P. Kogut, Yu.R. Warchulska, J.K. |
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| Subject |
Characterization and properties
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| Description |
The magnetoresistance and magnetic susceptibility (MS) of Si—Ge whiskers have been determined in the temperature range 4.2-300 K in magnetic fields up to 140 and 4.0 kOe, respectively. The results obtained show two peculiarities: a substantial paramagnetic contribution to the whisker MS and magnetization, non-linear dependency of magnetization on magnetic field. These facts indicate the existence of antiferromagnetic ordering in the whiskers. The magnetization hysteresis really observed at 4.2 K confirms the above supposition. Possible reasons of the effect revealed are discussed.
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| Date |
2018-06-16T17:49:49Z
2018-06-16T17:49:49Z 2007 |
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| Type |
Article
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| Identifier |
Magnetoresistance and magnetic susceptibility of doped Si-Ge whiskers / A.A. Druzhinin, I.P. Ostrovskii, Yu.R. Kogut, J.K. Warchulska // Functional Materials. — 2007. — Т. 14, № 4. — С. 480-484. — Бібліогр.: 12 назв. — англ.
1027-5495 http://dspace.nbuv.gov.ua/handle/123456789/136922 |
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| Language |
en
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| Relation |
Functional Materials
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| Publisher |
НТК «Інститут монокристалів» НАН України
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